sff4n60 copyright@semiwellsemiconductorltd.,allrightsa rereserved semiwell semiconductor absolutemaximumratings(t j =25 unless otherwise specified) symbol parameter ratings units v dss drainsourcevoltage 600 v i d draincurrent t c =25 t c =100 4 2.4 a v gss gatesourcevoltage 30 v i dm draincurrent pulse (note 1) 8 a e as singlepulseavalancheenergy (note 2) 180 mj e ar repetitiveavalancheenergy (note 1) 10.4 mj dv/dt peakdioderecoverydv/dt ( note3) 4.5 v/ns p d powerdissipationt c =25 104 w t j ,t stg operationandstoragetemperaturerange 45~150 n-channel mosfet features r ds(on) max2.5ohmatv gs =10v gatecharge(typical16.0nc) improvedv/dtcapability,fastswitching 100%avalanchetested general description this mosfet is produced using advanced planar strip dmos technology. this latest technology has been especially designed to minimize onstate resistance have a high rugged avalanche characteristics. these device s are well suited for high efficiency switch mode power s upply activepowerfactorcorrection.electroniclampbas edonhalf bridgetopology
sff4n60 thermalcharacteristics symbol parameter ratings unit r jc thermalresistancejunctiontocase 1.2 /w r cs thermalresistancecasetosinktyp. 0.5 /w r ja thermalresistancejunctiontoambient 62.5 /w electricalcharacteristics(tc=25 unlessotherwisenoted) symbol items conditions ratings unit min typ. max bv dss drainsourcebreakdownvoltage v gs =0v,i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua,referenceto25 0.6 v/ i dss zerogatevoltagedraincurrent v ds =600v,v gs =0v v ds =480v,t s =125 1 10 ua i gssf gatebodyleakagecurrentforward v gs =30v,v ds =0v 100 na i gssr gatebodyleakagecurrentreverse v gs =30v,v ds =0v 100 na oncharacteristics v gs(th) gatethresholdvoltage v gs =v ds ,i d =250ua 2.5 4.5 v r ds(on) staticdrainsourceonresistance v gs =10v,i d =2.0a 2.0 2.5 dynamiccharacteristics c iss inputcapacitance v ds =25v,v gs =0v f=1.0mhz 560 pf c oss outputcapacitance 55 pf c rss reversetransfercapacitance 7 pf 2/5
sff4n60 switchingcharacteristics symbol items conditions min typ. max units t d(on) turnondelaytime v dd =300v,i d =4.0a r g =25 (note4,5) 10 ns t r turnonrisetime 40 ns t d(off) turnoffdelaytime 40 ns t f turnofffalltime 50 ns q g totalgatecharge v ds =480v,i d =4.0a v gs =10v (note4,5) 16 nc q gs gatesourcecharge 2.5 nc q gd gatedraincharge 6.5 nc drainsourcediodecharacteristics i s maximumcontinuousdrainsourcediodeforwardcurr ent 4.0 a i sm maximumpulsedrainsourcediodeforwardcurrent 16.0 a v sd drainsourcediodeforwardvoltage v gs =0v,i s =4.0a 1.4 v t rr reverserecoverytime v gs =0v,i s =4.0a dl f /dt=100a/us (note4) 300 ns q rr reverserecoverycharge 2.0 uc notes 1. repetitiverating:pulsewidthlimitedbymaxim umjunctiontemperature 2. l=20mh,i as =4.0a,v dd =50v,r g =25,startingt j =25 3. i sd 4.0a,di/dt200a/us,v dd bv dss ,startingt j =25 4. pulsetest:pulsewidth300us,dutycycle2 % 5. essentiallyindependentofoperationtemperture 3/5
sff4n60 fig.1onregioncharacteristics fi g.2onresistancevariationvsdraincurrent andgatevoltage fig.3breakdownvoltagevariationvs fig4.onresistancevariationvstemperature temperature fig.5maximumsafeoperationarea f ig.6maximumdraincurrentvscasetemp. 4/5
sff4n60 to220fpackagedimension 5/5
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